| PART |
Description |
Maker |
| HFBR-53D5EM HFBR-53D5FM HFBR-53D3 HFBR-53D3EM HFBR |
SPECIALTY TELECOM CIRCUIT, XFO
1 x 9 5V Fiber Optic Transceiver for Fibre Channel/Storage - Flush Shield. Metalized Housing
1 x 9 Fiber Optic Transceivers for Gigabit Ethernet, Extended Shield, Metalized Housing
1 x 9 Fiber Optic Transceivers for Gigabit Ethernet , No Shield, Plastic Housing
1 x 9 Fiber Optic Transceivers for Gigabit Ethernet, Flush Shield, Metalized Housing
HFBR-53D3 · 1 x 9 5V Fiber Optic Transceiver for Fibre Channel/Storage - No Shield, Plastic Housing
HFBR-53D3EM · 1 x 9 5V Fiber Optic Transceiver for Fibre Channel/Storage - Extended Shield, Metalized Housing
HFBR-53D3FM · 1 x 9 5V Fiber Optic Transceiver for Fibre Channel/Storage - Flush Shield, Metalized Housing
HFCT-53D3FM · 1 x 9 5V Fiber Optic Transceiver for Fibre Channel/Storage - Flush Shield, Metalized Housing
HFCT-53D3EM · 1 x 9 5V Fiber Optic Transceiver for Fibre Channel/Storage - Extended Shield, Metalized Housing
|
Agilent / Hewlett-Packard
Agilent (Hewlett-Packard)
|
| 430P106X9100 430P394X9600 430P394X9400 430P394X920 |
Metalized Polyester Film Capacitors Wrap-and-Fill 金属化聚酯薄膜电容器总结和充
DC-DC Converter, 1Watt, Input VDC: 24, Output VDC: 24, Max Output Current(A): 0.042, Package: SIP4, Isolation(VDC): 3000, Operating Temp. -40C to 85C, Low Ripple & Noise, High Efficiency up to 80%, Low Profile Plastic Case, Single Output
CAP .012UF 16V PPS FILM 1206 5%
Metalized Polyester Film Capacitors Wrap-and-Fill
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
http://
|
| 430P106X9100 430P405X5100 430P405X5200 430P405X905 |
Metalized Polyester Film Capacitors Wrap-and-Fill
|
Vishay
|
| NSMX393100TRF NSMX563100TRF NSMX103100TRF NSMX1041 |
Wound Metalized PPS Film Capacitor Chips
|
NIC-Components Corp.
|
| MES104K2A050B250S |
METALIZED POLYESTER FILM CAPACITORS MES Series: Miniature, Radial
|
RFE international
|
| F1221 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1107 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1206 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F1116 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| PRF137 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2246 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
| F2012 |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
